Технічний опис VS-20ETF10PBF Vishay
Description: DIODE GEN PURP 1KV 20A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 160 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1000 V.
Інші пропозиції VS-20ETF10PBF
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VS-20ETF10PBF | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 1KV 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
товар відсутній |
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VS-20ETF10PBF | Виробник : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT VS-20ETF10-M3 |
товар відсутній |