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VS-1N3880 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Description: DIODE GEN PURP 100V 6A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
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Технічний опис VS-1N3880 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 6 A, Current - Reverse Leakage @ Vr: 15 µA @ 100 V.
Інші пропозиції VS-1N3880
Фото | Назва | Виробник | Інформація |
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VS-1N3880 | Виробник : Vishay Semiconductors | Rectifiers 100 Volt 12 Amp |
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