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VBT760-E3/8W Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 60V 7.5A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
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Технічний опис VBT760-E3/8W Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 7.5A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 7.5A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A, Current - Reverse Leakage @ Vr: 700 µA @ 60 V.
Інші пропозиції VBT760-E3/8W
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VBT760-E3/8W | Виробник : Vishay General Semiconductor |
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