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V9N3103-M3/I Vishay General Semiconductor - Diodes Division
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Description: 9A, 100V DFN33A TMBS RECT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.7A
Supplier Device Package: DFN33A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 41.82 грн |
10+ | 35.51 грн |
25+ | 33.33 грн |
100+ | 25.52 грн |
250+ | 23.7 грн |
500+ | 20.17 грн |
1000+ | 15.88 грн |
2500+ | 14.39 грн |
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Технічний опис V9N3103-M3/I Vishay General Semiconductor - Diodes Division
Description: 9A, 100V DFN33A TMBS RECT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 1150pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.7A, Supplier Device Package: DFN33A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A, Current - Reverse Leakage @ Vr: 500 µA @ 100 V.
Інші пропозиції V9N3103-M3/I
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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V9N3103-M3/I | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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