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V20KM100-M3/I Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Current - Average Rectified (Io): 4.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис V20KM100-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 1900pF @ 4V, 1MHz, Current - Average Rectified (Io): 4.2A, Supplier Device Package: FlatPAK (5x6), Operating Temperature - Junction: -40°C ~ 165°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A, Current - Reverse Leakage @ Vr: 250 µA @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції V20KM100-M3/I
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
V20KM100-M3/I | Виробник : Vishay General Semiconductor |
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