UT6JA2TCR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
на замовлення 5815 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.23 грн |
| 10+ | 47.39 грн |
| 100+ | 32.83 грн |
| 500+ | 25.74 грн |
| 1000+ | 21.91 грн |
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Технічний опис UT6JA2TCR Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V, Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: HUML2020L8, Part Status: Active.
Інші пропозиції UT6JA2TCR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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UT6JA2TCR | Виробник : ROHM Semiconductor |
MOSFET -30V Pch+Pch Si MOSFET |
на замовлення 3057 шт: термін постачання 21-30 дні (днів) |
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| UT6JA2TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W Case: DFN2020D-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4A On-state resistance: 103mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 6.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A кількість в упаковці: 1 шт |
товар відсутній |
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UT6JA2TCR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A HUML2020L8 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: HUML2020L8 Part Status: Active |
товар відсутній |
|
| UT6JA2TCR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -12A; 2W Case: DFN2020D-8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4A On-state resistance: 103mΩ Type of transistor: P-MOSFET x2 Power dissipation: 2W Polarisation: unipolar Gate charge: 6.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A |
товар відсутній |