Продукція > ROHM SEMICONDUCTOR > US5U3TR
US5U3TR

US5U3TR Rohm Semiconductor

US5U3.pdf Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
на замовлення 2639 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7+43.62 грн
10+ 36.72 грн
100+ 25.43 грн
500+ 19.94 грн
1000+ 16.97 грн
Мінімальне замовлення: 7
Відгуки про товар
Написати відгук

Технічний опис US5U3TR Rohm Semiconductor

Description: MOSFET N-CH 30V 1.5A TUMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT5, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V.

Інші пропозиції US5U3TR

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
US5U3TR US5U3TR Виробник : Rohm Semiconductor US5U3.pdf Description: MOSFET N-CH 30V 1.5A TUMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT5
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
товар відсутній
US5U3TR US5U3TR Виробник : ROHM Semiconductor us5u3-1018376.pdf MOSFET 2.5V Drive N-Chan + Sch Barrier Diode
товар відсутній