UG58GHA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 5A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Qualification: AEC-Q101.