UCC27210DDAR Texas Instruments
Виробник: Texas InstrumentsDescription: IC GATE DRVR HALF-BRIDGE 8SOPWR
Packaging: Bulk
Package / Case: 8-PowerSOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: 8-SO PowerPad
Rise / Fall Time (Typ): 7.2ns, 5.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 2.4V, 5.9V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 51579 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 273+ | 77.33 грн |
Відгуки про товар
Написати відгук
Технічний опис UCC27210DDAR Texas Instruments
Category: MOSFET/IGBT drivers, Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2, Type of integrated circuit: driver, Topology: H-bridge; MOSFET half-bridge, Kind of integrated circuit: high-/low-side; MOSFET gate driver, Case: SO8, Output current: 4A, Output voltage: 50...290mV, Number of channels: 2, Supply voltage: 8...17V DC, Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut), Mounting: SMD, Operating temperature: -40...140°C, Impulse rise time: 600ns, Pulse fall time: 400ns, Kind of package: reel; tape, кількість в упаковці: 1 шт.
Інші пропозиції UCC27210DDAR за ціною від 64.81 грн до 171.56 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
UCC27210DDAR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR Packaging: Cut Tape (CT) Package / Case: 8-PowerSOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SO PowerPad Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2.4V, 5.9V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
UCC27210DDAR | Виробник : Texas Instruments |
Gate Drivers 4A Peak,Hi Freq High/Low-Side Driver |
на замовлення 2143 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
UCC27210DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
товар відсутній |
|||||||||||||||||
 |
UCC27210DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
товар відсутній |
|||||||||||||||||
|
|
UCC27210DDAR | Виробник : Texas Instruments |
Driver 4.5A 2-OUT High and Low Side Full Brdg/Half Brdg Non-Inv 8-Pin HSOIC EP T/R |
товар відсутній |
|||||||||||||||||
| UCC27210DDAR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: 4A Output voltage: 50...290mV Number of channels: 2 Supply voltage: 8...17V DC Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 600ns Pulse fall time: 400ns Kind of package: reel; tape кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
|
|
UCC27210DDAR | Виробник : Texas Instruments |
Description: IC GATE DRVR HALF-BRIDGE 8SOPWR Packaging: Tape & Reel (TR) Package / Case: 8-PowerSOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 140°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: 8-SO PowerPad Rise / Fall Time (Typ): 7.2ns, 5.5ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 2.4V, 5.9V Current - Peak Output (Source, Sink): 4A, 4A Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
|||||||||||||||||
| UCC27210DDAR | Виробник : TEXAS INSTRUMENTS |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge,MOSFET half-bridge; SO8; 4A; 50÷290mV; Ch: 2 Type of integrated circuit: driver Topology: H-bridge; MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Output current: 4A Output voltage: 50...290mV Number of channels: 2 Supply voltage: 8...17V DC Integrated circuit features: active Miller clamp; integrated bootstrap functionality; UVLO (UnderVoltage LockOut) Mounting: SMD Operating temperature: -40...140°C Impulse rise time: 600ns Pulse fall time: 400ns Kind of package: reel; tape |
товар відсутній |