TW070J120B,S1Q Toshiba Semiconductor and Storage

Description: SICFET N-CH 1200V 36A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V, FET Feature: Standard, Power Dissipation (Max): 272W (Tc), Vgs(th) (Max) @ Id: 5.8V @ 20mA, Supplier Device Package: TO-3P(N), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): ±25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V.