Технічний опис TSM500N15CS Taiwan Semiconductor
Description: 150V, 11A, SINGLE N-CHANNEL POWE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 12.7W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V.
Інші пропозиції TSM500N15CS
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TSM500N15CS | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 12.7W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V |
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