TSM4806CS

TSM4806CS Taiwan Semiconductor


141tsm4806_b1710.pdf Виробник: Taiwan Semiconductor
Trans MOSFET N-CH 20V 28A 8-Pin SOP T/R
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Технічний опис TSM4806CS Taiwan Semiconductor

Description: 20V, 28A, SINGLE N-CHANNEL POWER, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V.

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TSM4806CS Виробник : Taiwan Semiconductor Corporation Description: 20V, 28A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V
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