![TSM300NB06DCR RLG TSM300NB06DCR RLG](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/335/1801%3B-8PDFN-Dual-1.1-4.9x5.75%3B-%3B-8.jpg)
TSM300NB06DCR RLG Taiwan Semiconductor Corporation
![TSM300NB06DCR_A1908.pdf](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 60V 6A/25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 30.3 грн |
5000+ | 27.79 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM300NB06DCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 60V 6A/25A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 40W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active.
Інші пропозиції TSM300NB06DCR RLG за ціною від 29.08 грн до 73.13 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
TSM300NB06DCR RLG | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1079pF @ 30V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active |
на замовлення 10052 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
![]() |
TSM300NB06DCR RLG | Виробник : Taiwan Semiconductor |
![]() |
на замовлення 4899 шт: термін постачання 21-30 дні (днів) |
|||||||||||||
TSM300NB06DCR RLG | Виробник : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||
TSM300NB06DCR RLG | Виробник : TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; 8W; PDFN56 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 8W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
товар відсутній |