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TSM300NB06CR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: MOSFET N-CH 60V 6A/27A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PDFN (5.2x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
на замовлення 1841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.57 грн |
| 10+ | 96.33 грн |
| 100+ | 75.11 грн |
| 500+ | 58.23 грн |
| 1000+ | 45.97 грн |
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Технічний опис TSM300NB06CR RLG Taiwan Semiconductor Corporation
Description: MOSFET N-CH 60V 6A/27A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerLDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Power Dissipation (Max): 3.1W (Ta), 56W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: 8-PDFN (5.2x5.75), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V.
Інші пропозиції TSM300NB06CR RLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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TSM300NB06CR RLG | Виробник : Taiwan Semiconductor |
Trans MOSFET N-CH 60V 27A 8-Pin PDFN EP T/R |
товар відсутній |
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| TSM300NB06CR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TSM300NB06CR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET N-CH 60V 6A/27A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V |
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TSM300NB06CR RLG | Виробник : Taiwan Semiconductor |
MOSFET 60V 27A 30mOhm N-Chan Pwr MOSFET |
товар відсутній |
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| TSM300NB06CR RLG | Виробник : TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; 19W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6A Power dissipation: 19W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced |
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