TSM1NB60LCW RPG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 600V, 0.55A, SINGLE N-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V
Power Dissipation (Max): 10.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.9 грн |
Відгуки про товар
Написати відгук
Технічний опис TSM1NB60LCW RPG Taiwan Semiconductor Corporation
Description: 600V, 0.55A, SINGLE N-CHANNEL PO, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V, Power Dissipation (Max): 10.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V.
Інші пропозиції TSM1NB60LCW RPG за ціною від 21.2 грн до 55.03 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TSM1NB60LCW RPG | Виробник : Taiwan Semiconductor Corporation |
Description: 600V, 0.55A, SINGLE N-CHANNEL PO Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), 550mA (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 270mA, 10V Power Dissipation (Max): 10.4W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 300 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
TSM1NB60LCW RPG | Виробник : Taiwan Semiconductor |
MOSFET 600V, 0.55A, Single N-Channel High Voltage MOSFETs |
товар відсутній |