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TSM080N03PQ56 RLG

TSM080N03PQ56 RLG Taiwan Semiconductor Corporation

TSM080N03PQ56_D1608.pdf Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+42.22 грн
10+ 35.43 грн
100+ 24.55 грн
500+ 19.25 грн
1000+ 16.38 грн
Мінімальне замовлення: 8
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Технічний опис TSM080N03PQ56 RLG Taiwan Semiconductor Corporation

Description: MOSFET N-CH 30V 73A 8PDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 73A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V, Power Dissipation (Max): 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PDFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V.

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Ціна без ПДВ
TSM080N03PQ56 RLG Виробник : Taiwan Semiconductor 612192561074621tsm080n03pq56_d1608.pdf Trans MOSFET N-CH 30V 14A 8-Pin DFN EP T/R
товар відсутній
TSM080N03PQ56 RLG TSM080N03PQ56 RLG Виробник : Taiwan Semiconductor Corporation TSM080N03PQ56_D1608.pdf Description: MOSFET N-CH 30V 73A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PDFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 843 pF @ 15 V
товар відсутній
TSM080N03PQ56 RLG TSM080N03PQ56 RLG Виробник : Taiwan Semiconductor TSM080N03PQ56_D1608.pdf MOSFET 30V, 73A, Single N-Channel Power MOSFET
товар відсутній