TSM076NH04LDCR RLG Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 55.6W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 105.54 грн |
| 10+ | 84.57 грн |
| 100+ | 67.33 грн |
| 500+ | 53.47 грн |
| 1000+ | 45.37 грн |
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Технічний опис TSM076NH04LDCR RLG Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 55.6W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V, Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PDFNU (5x6), Part Status: Active.
Інші пропозиції TSM076NH04LDCR RLG за ціною від 42.93 грн до 114.64 грн
| Фото | Назва | Виробник | Інформація |
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TSM076NH04LDCR RLG | Виробник : Taiwan Semiconductor | MOSFET 40V, 34A, Dual N-Channel Power MOSFET |
на замовлення 2388 шт: термін постачання 21-30 дні (днів) |
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TSM076NH04LDCR RLG | Виробник : Taiwan Semiconductor Corporation |
Description: MOSFET 2N-CH 40V 14A/34A 8PDFNU Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 55.6W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1344pF @ 25V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active |
товар відсутній |