TPW5200FNH,L1Q Toshiba Semiconductor and Storage
![TPW5200FNH_datasheet_en_20191030.pdf?did=30358&prodName=TPW5200FNH](/images/adobe-acrobat.png)
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 4826 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 199.2 грн |
10+ | 159.09 грн |
100+ | 126.59 грн |
500+ | 100.53 грн |
1000+ | 85.3 грн |
2000+ | 81.03 грн |
Відгуки про товар
Написати відгук
Технічний опис TPW5200FNH,L1Q Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V, Power Dissipation (Max): 800mW (Ta), 142W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: 8-DSOP Advance, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V.
Інші пропозиції TPW5200FNH,L1Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
TPW5200FNH,L1Q | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 13A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-DSOP Advance Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
товар відсутній |
||
![]() |
TPW5200FNH,L1Q | Виробник : Toshiba |
![]() |
товар відсутній |