TPN22006NH,LQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Drain to Source Voltage (Vdss): 60 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 24 грн |
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Технічний опис TPN22006NH,LQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V, Power Dissipation (Max): 700mW (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: 8-TSON Advance (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30, Drain to Source Voltage (Vdss): 60 V.
Інші пропозиції TPN22006NH,LQ за ціною від 20.59 грн до 92.76 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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TPN22006NH,LQ | Виробник : Toshiba |
MOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC |
на замовлення 2840 шт: термін постачання 21-30 дні (днів) |
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TPN22006NH,LQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 9A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V Power Dissipation (Max): 700mW (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: 8-TSON Advance (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 Drain to Source Voltage (Vdss): 60 V |
на замовлення 5890 шт: термін постачання 21-31 дні (днів) |
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