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TPH6R003NL,LQ

TPH6R003NL,LQ Toshiba Semiconductor and Storage

TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 38A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 2812 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+59.96 грн
10+ 47.46 грн
100+ 36.91 грн
500+ 29.36 грн
1000+ 23.91 грн
Мінімальне замовлення: 5
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Технічний опис TPH6R003NL,LQ Toshiba Semiconductor and Storage

Description: MOSFET N CH 30V 38A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V, Power Dissipation (Max): 1.6W (Ta), 34W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V.

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Ціна без ПДВ
TPH6R003NL,LQ TPH6R003NL,LQ Виробник : Toshiba 334tph6r003nl_datasheet_en_20140218.pdf.pdf Trans MOSFET N-CH Si 30V 57A 8-Pin SOP Advance T/R
товар відсутній
TPH6R003NL,LQ TPH6R003NL,LQ Виробник : Toshiba Semiconductor and Storage TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Description: MOSFET N CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
товар відсутній
TPH6R003NL,LQ TPH6R003NL,LQ Виробник : Toshiba TPH6R003NL_datasheet_en_20140218-1915968.pdf MOSFET N-Ch DTMOS VII-H 34W 1050pF 57A 30V
товар відсутній