![TPH1110ENH,L1Q TPH1110ENH,L1Q](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2450/8-PowerVDFN PKG.jpg)
TPH1110ENH,L1Q Toshiba Semiconductor and Storage
![TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH](/images/adobe-acrobat.png)
Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис TPH1110ENH,L1Q Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V, Power Dissipation (Max): 1.6W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 8-SOP Advance (5x5), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V.
Інші пропозиції TPH1110ENH,L1Q
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
TPH1110ENH,L1Q | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V |
товар відсутній |
|
![]() |
TPH1110ENH,L1Q | Виробник : Toshiba |
![]() |
товар відсутній |