Технічний опис TPCP8303,LF(CM Toshiba
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -3.8A, Power dissipation: 1.48W, Case: PS8, Gate-source voltage: ±8V, On-state resistance: 41mΩ, Mounting: SMD, Gate charge: 10nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції TPCP8303,LF(CM
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TPCP8303,LF(CM | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Case: PS8 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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TPCP8303,LF(CM | Виробник : TOSHIBA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.8A; 1.48W; PS8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.48W Case: PS8 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |