на замовлення 1951 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 79.26 грн |
| 10+ | 63.8 грн |
| 100+ | 43.24 грн |
| 500+ | 36.65 грн |
| 1000+ | 29.85 грн |
| 3000+ | 28.06 грн |
| 6000+ | 27.27 грн |
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Технічний опис TPCP8011,LF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR PS-, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V, Power Dissipation (Max): 940mW (Ta), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: PS-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції TPCP8011,LF за ціною від 29.81 грн до 75.11 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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| TPCP8011,LF | Виробник : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR PS-Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PS-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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TPCP8011,LF | Виробник : Toshiba |
Trans MOSFET N-CH Si 40V 5A 8-Pin PS T/R Automotive AEC-Q101 |
товар відсутній |
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| TPCP8011,LF | Виробник : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR PS- Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 51.2mOhm @ 2.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PS-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |