Технічний опис TN0104N3-G-P014 MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 40V 450MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V.
Інші пропозиції TN0104N3-G-P014
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TN0104N3-G-P014 | Виробник : Microchip Technology |
Description: MOSFET N-CH 40V 450MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 500µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V |
товару немає в наявності |
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TN0104N3-G-P014 | Виробник : Microchip Technology | MOSFETs N-CH Enhancmnt Mode MOSFET |
товару немає в наявності |