![TK72E08N1,S1X TK72E08N1,S1X](https://media.digikey.com/Photos/Toshiba%20Photos/264_TO-220-3.jpg)
TK72E08N1,S1X Toshiba Semiconductor and Storage
![docget.jsp?did=13153&prodName=TK72E08N1](/images/adobe-acrobat.png)
Description: MOSFET N-CH 80V 72A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 177.91 грн |
10+ | 154.19 грн |
Відгуки про товар
Написати відгук
Технічний опис TK72E08N1,S1X Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 72A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 36A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V.
Інші пропозиції TK72E08N1,S1X
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
TK72E08N1,S1X | Виробник : Toshiba |
![]() |
товар відсутній |