![TK560A60Y,S4X TK560A60Y,S4X](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/TO-220SIS_DSL.jpg)
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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4+ | 109.06 грн |
10+ | 87.29 грн |
100+ | 60.8 грн |
500+ | 49.27 грн |
1000+ | 38.73 грн |
5000+ | 37.67 грн |
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Технічний опис TK560A60Y,S4X Toshiba
Description: MOSFET N-CH 600V 7A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V, Power Dissipation (Max): 30W, Vgs(th) (Max) @ Id: 4V @ 240µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V.
Інші пропозиції TK560A60Y,S4X
Фото | Назва | Виробник | Інформація |
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TK560A60Y,S4X | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Power Dissipation (Max): 30W Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
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