Технічний опис TK17E80W,S1X Toshiba
Description: MOSFET N-CHANNEL 800V 17A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 850µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V.
Інші пропозиції TK17E80W,S1X
Фото | Назва | Виробник | Інформація |
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TK17E80W,S1X | Виробник : Toshiba |
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TK17E80W,S1X | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
товар відсутній |
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TK17E80W,S1X | Виробник : Toshiba |
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товар відсутній |