Технічний опис TK15J60U(F)
Description: MOSFET N-CH 600V 15A TO3P, Packaging: Tray, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-3P(N), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V.
Інші пропозиції TK15J60U(F)
Фото | Назва | Виробник | Інформація |
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TK15J60U(F) | Виробник : Toshiba |
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TK15J60U(F) | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tray Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3P(N) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V |
товар відсутній |
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TK15J60U(F) | Виробник : Toshiba |
![]() |
товар відсутній |