![TK12A60U(Q,M) TK12A60U(Q,M)](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4845/264_TO-220-3%20Full%20Pack.jpg)
TK12A60U(Q,M) Toshiba Semiconductor and Storage
![Mosfets_Prod_Guide.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис TK12A60U(Q,M) Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 12A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 6A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 10 V.
Інші пропозиції TK12A60U(Q,M)
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
![]() |
TK12A60U(Q,M) | Виробник : Toshiba |
![]() |
товар відсутній |