Технічний опис STW68N65DM6 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 24A, 10V, Power Dissipation (Max): 431W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V.
Інші пропозиції STW68N65DM6
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STW68N65DM6 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 48A 3-Pin(3+Tab) TO-247 Tube |
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| STW68N65DM6 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 48A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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| STW68N65DM6 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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| STW68N65DM6 | Виробник : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 24A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 100 V |
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STW68N65DM6 | Виробник : STMicroelectronics |
MOSFETs N-channel 650 V, 51 mOhm typ 55 A MDmesh DM6 Power MOSFET |
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| STW68N65DM6 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 172A Power dissipation: 431W Case: TO247 Gate-source voltage: ±25V On-state resistance: 59mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |