Технічний опис STW56N65M2-4 STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V, Power Dissipation (Max): 358W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V.
Інші пропозиції STW56N65M2-4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STW56N65M2-4 | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 650V 49A 4-Pin(4+Tab) TO-247 Tube |
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| STW56N65M2-4 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
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STW56N65M2-4 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 650V 49A 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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STW56N65M2-4 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 650V 49A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V Power Dissipation (Max): 358W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
товар відсутній |
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STW56N65M2-4 | Виробник : STMicroelectronics |
MOSFETs N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET |
товар відсутній |
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| STW56N65M2-4 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |