STP190N55LF3 STMicroelectronics

Description: MOSFET N-CH 55V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 25 V.