STL9N60M2 STMicroelectronics
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 138.19 грн |
10+ | 90.41 грн |
100+ | 64.24 грн |
500+ | 49.37 грн |
1000+ | 45.81 грн |
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Технічний опис STL9N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerFlat™ (5x6) HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V.
Інші пропозиції STL9N60M2 за ціною від 46.84 грн до 173.05 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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STL9N60M2 | Виробник : STMicroelectronics | MOSFETs N-channel 600 V, 0.76 Ohm typ 4.8 A MDmesh M2 Power MOSFET |
на замовлення 3000 шт: термін постачання 133-142 дні (днів) |
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STL9N60M2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R |
товару немає в наявності |
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STL9N60M2 | Виробник : STMicroelectronics | Trans MOSFET N-CH 600V 4.8A 8-Pin Power Flat EP T/R |
товару немає в наявності |
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STL9N60M2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 600V 4.8A PWRFLAT56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V |
товару немає в наявності |