STH410N4F7-6AG STMicroelectronics
Виробник: STMicroelectronicsMOSFETs Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.99 грн |
| 10+ | 387.86 грн |
| 25+ | 318.61 грн |
| 100+ | 272.69 грн |
| 250+ | 257.62 грн |
| 500+ | 242.55 грн |
| 1000+ | 195.19 грн |
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Технічний опис STH410N4F7-6AG STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 365W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: H2PAK-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції STH410N4F7-6AG
| Фото | Назва | Виробник | Інформація |
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STH410N4F7-6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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STH410N4F7-6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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STH410N4F7-6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive AEC-Q101 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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| STH410N4F7-6AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) H2PAK T/R |
товар відсутній |
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STH410N4F7-6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK-6 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 365W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2PAK-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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STH410N4F7-6AG | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK-6 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 365W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2PAK-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |