на замовлення 493 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 329.86 грн |
| 10+ | 273.15 грн |
| 25+ | 170.79 грн |
| 300+ | 144.96 грн |
| 600+ | 144.24 грн |
| 2700+ | 137.78 грн |
| 5100+ | 137.06 грн |
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Технічний опис STGWF30NC60S STMicroelectronics
Description: IGBT 600V 35A 79W TO3P, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 21.5ns/180ns, Switching Energy: 300µJ (on), 1.28mJ (off), Test Condition: 480V, 20A, 10Ohm, 15V, Gate Charge: 96 nC, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 79 W.
Інші пропозиції STGWF30NC60S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STGWF30NC60S | Виробник : STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 18A; 79W; TO3PF Mounting: THT Collector current: 18A Power dissipation: 79W Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Case: TO3PF Kind of package: tube Gate charge: 96nC Type of transistor: IGBT Pulsed collector current: 150A кількість в упаковці: 1 шт |
товар відсутній |
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STGWF30NC60S | Виробник : STMicroelectronics |
Description: IGBT 600V 35A 79W TO3P Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 21.5ns/180ns Switching Energy: 300µJ (on), 1.28mJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 96 nC Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 79 W |
товар відсутній |
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| STGWF30NC60S | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 18A; 79W; TO3PF Mounting: THT Collector current: 18A Power dissipation: 79W Gate-emitter voltage: ±20V Collector-emitter voltage: 600V Case: TO3PF Kind of package: tube Gate charge: 96nC Type of transistor: IGBT Pulsed collector current: 150A |
товар відсутній |