STGWA60V60DF STMicroelectronics
Виробник: STMicroelectronicsDescription: IGBT TRENCH FS 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 283.33 грн |
| 30+ | 216.08 грн |
| 120+ | 185.21 грн |
Відгуки про товар
Написати відгук
Технічний опис STGWA60V60DF STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 74 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247 Long Leads, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 60ns/208ns, Switching Energy: 750µJ (on), 550µJ (off), Test Condition: 400V, 60A, 4.7Ohm, 15V, Gate Charge: 334 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Інші пропозиції STGWA60V60DF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STGWA60V60DF | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
|
| STGWA60V60DF | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
||
| STGWA60V60DF | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
||
 |
STGWA60V60DF | Виробник : STMicroelectronics |
IGBT Transistors 600 V, 60 A very high speed trench gate field-stop IGBT |
товар відсутній |
|
| STGWA60V60DF | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 334nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |