Технічний опис STGWA15S120DF3 STMicroelectronics
Description: IGBT 1200V 15A TO247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 270 ns, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/140ns, Switching Energy: 540µJ (on), 1.38mJ (off), Test Condition: 600V, 15A, 22Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 259 W.
Інші пропозиції STGWA15S120DF3
| Фото | Назва | Виробник | Інформація |
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| STGWA15S120DF3 | Виробник : STMicroelectronics |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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STGWA15S120DF3 | Виробник : STMicroelectronics |
Description: IGBT 1200V 15A TO247-3L Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 270 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/140ns Switching Energy: 540µJ (on), 1.38mJ (off) Test Condition: 600V, 15A, 22Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 259 W |
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STGWA15S120DF3 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, S series 1200 V, 15 A low drop |
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| STGWA15S120DF3 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 15A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 15A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: THT Gate charge: 53nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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