STGW80H65DFB-4 STMicroelectronics
на замовлення 345 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 572.63 грн |
| 10+ | 483.7 грн |
| 25+ | 381.67 грн |
| 100+ | 350.39 грн |
| 250+ | 329.53 грн |
| 600+ | 307.29 грн |
| 1200+ | 293.38 грн |
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Технічний опис STGW80H65DFB-4 STMicroelectronics
Description: IGBT BIPO 650V 80A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 85 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 84ns/280ns, Switching Energy: 2.1mJ (on), 1.5mJ (off), Test Condition: 400V, 80A, 10Ohm, 15V, Gate Charge: 414 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 469 W.
Інші пропозиції STGW80H65DFB-4
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| STGW80H65DFB-4 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 650V 120A 469W 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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| STGW80H65DFB-4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 469000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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| STGW80H65DFB-4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 120A 469mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
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| STGW80H65DFB-4 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
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STGW80H65DFB-4 | Виробник : STMicroelectronics |
Description: IGBT BIPO 650V 80A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 85 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 84ns/280ns Switching Energy: 2.1mJ (on), 1.5mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 414 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 469 W |
товар відсутній |
|
| STGW80H65DFB-4 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 470W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 470W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 414nC Kind of package: tube Features of semiconductor devices: Kelvin terminal |
товар відсутній |