STGW60H65DFB-4 STMICROELECTRONICS
Виробник: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGW60H65DFB-4 - IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 4 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.6V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: TO-247
Anzahl der Pins: 4Pin(s)
Produktpalette: HB
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 80A
SVHC: No SVHC (23-Jan-2024)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 333.01 грн |
| 5+ | 280.76 грн |
| 10+ | 249.57 грн |
Відгуки про товар
Написати відгук
Технічний опис STGW60H65DFB-4 STMICROELECTRONICS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A, Supplier Device Package: TO-247-4, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 65ns/261ns, Switching Energy: 346µJ (on), 1.161mJ (off), Test Condition: 400V, 60A, 10Ohm, 15V, Gate Charge: 306 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 375 W.
Інші пропозиції STGW60H65DFB-4 за ціною від 236.81 грн до 415.88 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STGW60H65DFB-4 | Виробник : STMicroelectronics |
Description: IGBT Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 65ns/261ns Switching Energy: 346µJ (on), 1.161mJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 306 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 375 W |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
| STGW60H65DFB-4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
||||||||||||
| STGW60H65DFB-4 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 80A 375000mW 4-Pin(4+Tab) TO-247 Tube |
товар відсутній |
||||||||||||
| STGW60H65DFB-4 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
 |
STGW60H65DFB-4 | Виробник : STMicroelectronics |
IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
товар відсутній |
|||||||||||
| STGW60H65DFB-4 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |