Технічний опис STGW30N120KD STM
Description: IGBT 1200V 60A 220W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 125°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 84 ns, Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 20A, Supplier Device Package: TO-247-3, Td (on/off) @ 25°C: 36ns/251ns, Switching Energy: 2.4mJ (on), 4.3mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 105 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 220 W.
Інші пропозиції STGW30N120KD
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STGW30N120KD Код товару: 42292 |
Виробник : ST |
 Транзистори > IGBTКорпус: TO-247 Vces: 1200 V Vce: 2,8 V Ic 25: 60 A Ic 100: 30 A td(on)/td(off) 100-150 град: 36/140 |
товар відсутній
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STGW30N120KD | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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STGW30N120KD | Виробник : STMicroelectronics |
Description: IGBT 1200V 60A 220W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 84 ns Vce(on) (Max) @ Vge, Ic: 3.85V @ 15V, 20A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 36ns/251ns Switching Energy: 2.4mJ (on), 4.3mJ (off) Test Condition: 960V, 20A, 10Ohm, 15V Gate Charge: 105 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 220 W |
товар відсутній |
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STGW30N120KD | Виробник : STMicroelectronics |
IGBT Transistors 30 A - 1200 V Rugged IGBT |
товар відсутній |