STGP8M120DF3 STMicroelectronics
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 360 грн |
| 10+ | 297.91 грн |
| 25+ | 243.98 грн |
| 100+ | 209.54 грн |
| 250+ | 197.34 грн |
| 500+ | 185.86 грн |
| 1000+ | 159.31 грн |
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Технічний опис STGP8M120DF3 STMicroelectronics
Description: TRENCH GATE FIELD-STOP, 1200 V,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 103 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/126ns, Switching Energy: 390µJ (on), 370µJ (Off), Test Condition: 600V, 8A, 33Ohm, 15V, Gate Charge: 32 nC, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 32 A.
Інші пропозиції STGP8M120DF3
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
|---|---|---|---|---|---|
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STGP8M120DF3 | Виробник : STMicroelectronics |
 Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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STGP8M120DF3 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167W 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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| STGP8M120DF3 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-220AB Tube |
товар відсутній |
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| STGP8M120DF3 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 32A Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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STGP8M120DF3 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP, 1200 V, Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A Supplier Device Package: TO-220 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/126ns Switching Energy: 390µJ (on), 370µJ (Off) Test Condition: 600V, 8A, 33Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 32 A |
товар відсутній |
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| STGP8M120DF3 | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 8A Power dissipation: 167W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 32A Mounting: THT Gate charge: 32nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |