STGP5H60DF STMicroelectronics
Виробник: STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, H S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
Description: TRENCH GATE FIELD-STOP IGBT, H S
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 75.3 грн |
50+ | 58.45 грн |
100+ | 46.32 грн |
500+ | 36.85 грн |
1000+ | 36.45 грн |
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Технічний опис STGP5H60DF STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, H S, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 134.5 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A, Supplier Device Package: TO-220, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/140ns, Switching Energy: 56µJ (on), 78.5µJ (off), Test Condition: 400V, 5A, 47Ohm, 15V, Gate Charge: 43 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 88 W.
Інші пропозиції STGP5H60DF за ціною від 50.47 грн до 90.16 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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STGP5H60DF | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGP5H60DF - IGBT, 10 A, 1.5 V, 88 W, 600 V, TO-220AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 88W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: H Kollektor-Emitter-Spannung, max.: 600V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 10A SVHC: No SVHC (23-Jan-2024) |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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STGP5H60DF | Виробник : STMicroelectronics | Trans IGBT Chip N-CH 600V 10A 88W 3-Pin(3+Tab) TO-220AB Tube |
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STGP5H60DF | Виробник : STMicroelectronics | Trans IGBT Chip N-CH 600V 10A 88mW 3-Pin(3+Tab) TO-220AB Tube |
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STGP5H60DF | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 38nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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STGP5H60DF | Виробник : STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed |
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STGP5H60DF | Виробник : STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 5A; 88W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 88W Case: TO220AB Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 38nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |