STGD6M65DF2 STMicroelectronics
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 35.85 грн |
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Технічний опис STGD6M65DF2 STMicroelectronics
Description: TRENCH GATE FIELD-STOP IGBT, M S, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A, Supplier Device Package: DPAK, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 15ns/90ns, Switching Energy: 36µJ (on), 200µJ (off), Test Condition: 400V, 6A, 22Ohm, 15V, Gate Charge: 21.2 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 88 W.
Інші пропозиції STGD6M65DF2 за ціною від 33.65 грн до 99.76 грн
| Фото | Назва | Виробник | Інформація |
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STGD6M65DF2 | Виробник : STMicroelectronics |
 Description: TRENCH GATE FIELD-STOP IGBT, M SPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STGD6M65DF2 | Виробник : STMicroelectronics |
Description: TRENCH GATE FIELD-STOP IGBT, M S Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 140 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Supplier Device Package: DPAK IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/90ns Switching Energy: 36µJ (on), 200µJ (off) Test Condition: 400V, 6A, 22Ohm, 15V Gate Charge: 21.2 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 88 W |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
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STGD6M65DF2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 6 A low loss |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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STGD6M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88W 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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| STGD6M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 12A 88000mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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| STGD6M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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| STGD6M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 88W; DPAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 88W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 24A Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |