STG200G65FD8AG STMicroelectronics


en.dm00998337.pdf Виробник: STMicroelectronics
Trans IGBT Chip N-CH 650V 200A Automotive 3-Pin Die T/R
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Технічний опис STG200G65FD8AG STMicroelectronics

Description: IGBT TRENCH FS 650V 200A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A, Supplier Device Package: Die, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 66.2ns/442.7ns, Switching Energy: 5.34mJ (on), 6.23mJ (off), Test Condition: 400V, 200A, 4.7Ohm, 15V, Gate Charge: 701 nC, Grade: Automotive, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 600 A, Qualification: AEC-Q101.

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STG200G65FD8AG Виробник : STMicroelectronics stg200g65fd8ag.pdf Description: IGBT TRENCH FS 650V 200A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66.2ns/442.7ns
Switching Energy: 5.34mJ (on), 6.23mJ (off)
Test Condition: 400V, 200A, 4.7Ohm, 15V
Gate Charge: 701 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Qualification: AEC-Q101
товару немає в наявності
STG200G65FD8AG Виробник : STMicroelectronics stg200g65fd8ag.pdf IGBTs Automotive-grade trench gate field-stop 650V 200A high-efficiency M series IGBT
товару немає в наявності