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SSM6N62TU,LF Toshiba Semiconductor and Storage
![SSM6N62TU_datasheet_en_20210528.pdf?did=37065&prodName=SSM6N62TU](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.23 грн |
6000+ | 8.44 грн |
9000+ | 7.84 грн |
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Технічний опис SSM6N62TU,LF Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6.
Інші пропозиції SSM6N62TU,LF за ціною від 9.33 грн до 27.37 грн
Фото | Назва | Виробник | Інформація |
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SSM6N62TU,LF | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 |
на замовлення 15589 шт: термін постачання 21-31 дні (днів) |
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SSM6N62TU,LF | Виробник : Toshiba |
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