SSM6L39TU,LF Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.74 грн |
| 6000+ | 8.07 грн |
| 9000+ | 7.26 грн |
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Технічний опис SSM6L39TU,LF Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA, Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V, FET Feature: Logic Level Gate, 1.8V Drive, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UF6, Part Status: Active.
Інші пропозиції SSM6L39TU,LF за ціною від 6.92 грн до 34.86 грн
| Фото | Назва | Виробник | Інформація |
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SSM6L39TU,LF | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V FET Feature: Logic Level Gate, 1.8V Drive Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UF6 Part Status: Active |
на замовлення 18006 шт: термін постачання 21-31 дні (днів) |
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SSM6L39TU,LF | Виробник : Toshiba |
 MOSFETs Small Signal MOSFET |
на замовлення 17355 шт: термін постачання 21-30 дні (днів) |
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