SSM6J214FE(TE85L,F Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Description: MOSFET P-CH 30V 3.6A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4000+ | 7.96 грн |
8000+ | 7.35 грн |
12000+ | 6.61 грн |
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Технічний опис SSM6J214FE(TE85L,F Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 3.6A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1mA, Supplier Device Package: ES6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V.
Інші пропозиції SSM6J214FE(TE85L,F за ціною від 5.97 грн до 35.1 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SSM6J214FE(TE85L,F | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 3.6A ES6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1mA Supplier Device Package: ES6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V |
на замовлення 19825 шт: термін постачання 21-31 дні (днів) |
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SSM6J214FE(TE85L,F | Виробник : Toshiba | MOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V |
на замовлення 5808 шт: термін постачання 21-30 дні (днів) |
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SSM6J214FE(TE85L,F | Виробник : Toshiba | Trans MOSFET P-CH Si 30V 3.6A 6-Pin ES T/R |
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