![SSM6J213FE(TE85L,F SSM6J213FE(TE85L,F](https://www.mouser.com/images/toshibaamericaelectroniccomponentsinc/lrg/SOT_563_ES6_SC_107_6_DSL.jpg)
на замовлення 3747 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
9+ | 38.13 грн |
14+ | 23.12 грн |
100+ | 10.61 грн |
1000+ | 7.8 грн |
4000+ | 6.04 грн |
8000+ | 5.2 грн |
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Технічний опис SSM6J213FE(TE85L,F Toshiba
Description: MOSFET P CH 20V 2.6A ES6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: ES6, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V.
Інші пропозиції SSM6J213FE(TE85L,F
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SSM6J213FE(TE85L,F | Виробник : Toshiba |
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товар відсутній |
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SSM6J213FE(TE85L,F | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
товар відсутній |
|
![]() |
SSM6J213FE(TE85L,F | Виробник : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: ES6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
товар відсутній |