SQR50N04-3m8_GE3 Vishay Siliconix
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Description: MOSFET N-CH 40V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1857 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 114.81 грн |
10+ | 91.66 грн |
100+ | 72.96 грн |
500+ | 57.94 грн |
1000+ | 49.16 грн |
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Технічний опис SQR50N04-3m8_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 50A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQR50N04-3m8_GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQR50N04-3m8_GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V Qualification: AEC-Q101 |
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SQR50N04-3m8_GE3 | Виробник : Vishay / Siliconix |
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