SQM200N04-1m1L_GE3 Vishay Semiconductors
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.1 грн |
| 10+ | 280.51 грн |
| 100+ | 199.32 грн |
| 500+ | 170.74 грн |
| 800+ | 137.29 грн |
| 2400+ | 136.59 грн |
| 4800+ | 129.63 грн |
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Технічний опис SQM200N04-1m1L_GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 200A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V.
Інші пропозиції SQM200N04-1m1L_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQM200N04-1M1L-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263 |
товар відсутній |
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SQM200N04-1M1L_GE3 | Виробник : Vishay |
Trans MOSFET N-CH 40V 200A Automotive 7-Pin(6+Tab) TO-263 |
товар відсутній |
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SQM200N04-1m1L_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V |
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SQM200N04-1m1L_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V |
товар відсутній |